Files
Download Full Text (544.8 MB)
Publication Date
Summer 2025
Digital Publisher
Digital Commons at St. Mary's University
Collection
McNair Scholars Symposium
Keywords
Plasma etching, computational modeling, MATLAB, semiconductor fabrication, surface interaction
Description
This paper presents a study of plasma etching in tungsten diselenide (WSe2), a transition metal dichalcogenide with promising applications in nanofabrication. We investigate the effects of ion flux, incidence angle, and energy distribution on etch profiles by developing a custom MATLAB simulation framework informed by literature-derived experimental data. The simulation models trench geometry evolution over time and includes visualization of etch depth in 1D, 2D, and 3D. Preliminary results qualitatively reproduce anisotropic etching trends reported in the literature. This work aims to provide a scalable computational tool to aid understanding and optimization of plasma etching parameters for emerging nanomaterials.
Disciplines
Nanotechnology Fabrication | Plasma and Beam Physics
Format
MOV
Medium
Video
Size or Duration
13 minutes 27 seconds
City
San Antonio, Texas
Creative Commons License
This work is licensed under a Creative Commons Attribution-NonCommercial-No Derivative Works 4.0 International License.
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